13 September 1982 Checking Of The Thickness Uniformity Of Thin-Film Layers In Semiconductor Devices By Laser Ellipso-Interferometry
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New laser ellipso-interferometry has been developed on the basis of the principle that spatially and temporally coherent light reflected from the two surfaces of a thin solid film will interfere to form a two-dimensional fringe pattern which is directly related to the spatial distribution of the film thickness if the optical constants are uniformly distributed. This technique differs from the conventional ellipsometry and interferometry in that the new laser ellipso-interferometer can be used to map the thickness distribution of a whole thin film without involving the use of any scanning technique, and that its spatial resolution is high and can reach the diffraction-limited resolution under certain conditions. In this paper the principle and the applications of this technique are described and some experimental results are presented to demon-strate the use of this technique for checking the thickness uniformity of oxide layers in semiconductor devices. This new technique is non-destructive and the time required for this kind of measurements is much less than that by any other conventional techniques. Furthermore, no computation is involved for checking the film thickness uniformity if both the film and the substrate are transparent or low-absorbing to the laser light used for the measurements.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teruhita Mishima, Teruhita Mishima, Kwan C. Kao, Kwan C. Kao, } "Checking Of The Thickness Uniformity Of Thin-Film Layers In Semiconductor Devices By Laser Ellipso-Interferometry", Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); doi: 10.1117/12.933583; https://doi.org/10.1117/12.933583


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