22 November 1982 New Technique For Inspecting Charge-Coupled Device (CCD) Wafers For Defects
Author Affiliations +
Proceedings Volume 0336, Robot Vision; (1982); doi: 10.1117/12.933620
Event: 1982 Technical Symposium East, 1982, Arlington, United States
A new technique for inspecting extremely hign density CCU wafers (292 x 492 picture elements) for surface defects is proposed. The differential operator and the thresholding are employed to extract pattern boundary with a high. S/N ratio, after which a set of the pixels in a pattern area compared with the corresponding set of pixels in the adjacent repeating pattern. The defect is identified as the number of unmatching pixels by the above processing, adding the reduction technique for associated noise of the boundary. The practical system including the hardware logic of those processing ones it possible to inspect a 3-inch CCD wafer in 80 minutes.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshio Konishi, Morio Misono, Toshio Kato, "New Technique For Inspecting Charge-Coupled Device (CCD) Wafers For Defects", Proc. SPIE 0336, Robot Vision, (22 November 1982); doi: 10.1117/12.933620; https://doi.org/10.1117/12.933620

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