Paper
22 October 1982 Cryogenic Receivers For Millimeter And Near-Millimeter Wavelengths
G. R. Huguenin, P. F. Goldsmith, N. R. Erickson, C. R. Predmore
Author Affiliations +
Proceedings Volume 0337, Millimeter Wave Technology I; (1982) https://doi.org/10.1117/12.965922
Event: 1982 Technical Symposium East, 1982, Arlington, United States
Abstract
We present results for ambient temperature and cryogenic operation of mixer receivers for use in the 80-350 GHz range. These systems employ GaAs Schottky barrier diodes doped for optimum performance at 15 K, and make use of a combination of waveguide and quasioptical circuits for LO injection and sideband filtering. Cooled receiver temperatures (DSB) are ~ 65 K at 100 GHz, ~ 250 K at 225 GHz, and -- 530 K at 350 GHz. Local oscillator requirements are < 100 uW in the 3 mm range and 100-300 uW in the 1.5-1 mm range making it feasible to pump these mixers with frequency multiplied sources. The mixer receivers described are tunable over ~ 30-40% of their center frequency. The performance of the frequency multipliers is also discussed. The low noise performance has been achieved in part by use of specially designed FET amplifiers which are cooled to 15 K. For the receivers described, amplifiers centered near 1.5 GHz with ~ 400 MHz bandwidth have been employed.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. R. Huguenin, P. F. Goldsmith, N. R. Erickson, and C. R. Predmore "Cryogenic Receivers For Millimeter And Near-Millimeter Wavelengths", Proc. SPIE 0337, Millimeter Wave Technology I, (22 October 1982); https://doi.org/10.1117/12.965922
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KEYWORDS
Receivers

Oscillators

Diodes

Waveguides

Signal attenuation

Cryogenics

Temperature metrology

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