22 October 1982 Ion Implantation For Millimeter Wave IMPATT Diodes
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Proceedings Volume 0337, Millimeter Wave Technology I; (1982) https://doi.org/10.1117/12.965921
Event: 1982 Technical Symposium East, 1982, Arlington, United States
Abstract
Ion implantation has been attempted for the fabrication of double-drift silicon IMPATT diodes at millimeter wave frequencies in the range of 30 GHz to 220 GHz. The results, however, have been disappointing. This paper describes some of the reasons behind this apparent inadequacy of ion-implantation as revealed by spreading resistance probe. It also demonstrates an approach for successfully implementing ion implantation for double-drift silicon IMPATT structures, especially for frequencies above 100 GHz where the conventional double-epitaxy technique of double-drift structure realization has not yet been practical.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deen D. Khandelwal, "Ion Implantation For Millimeter Wave IMPATT Diodes", Proc. SPIE 0337, Millimeter Wave Technology I, (22 October 1982); doi: 10.1117/12.965921; https://doi.org/10.1117/12.965921
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