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28 December 1982 Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) Structure
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Proceedings Volume 0341, Real-Time Signal Processing V; (1982)
Event: 1982 Technical Symposium East, 1982, Arlington, United States
This paper describes a new method of surface potential measurement for MIS infrared focal plane arrays. The key feature of this method is a charge sensitive amplifier which detects the surface potential directly. The surface potential is subject to photo-generated charge carriers stored in a potential well as well as the gate voltage. Therefore, this measurement can be used for both electronic and optical characterization of an MIS infrared imager such as an infrared charge coupled device (IRCCD) or an infrared charge injection device (IRCCD). Mercury cadmium telluride (HgCdTe) IRCIDs with 3 x 5 pixels were evaluated using this technique. The measurement was controlled by HP System 35 and proved more accurate, informative, and speedy than the conventional capacitance-voltage (C-V) measurement.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshihiro Miyamoto, Tohru Maekawa, Toshiro Yamamoto, Kunihiro Tanikawa, Hiroshi Takigawa, Reikichi Tsunoda, and Toshio Kanno "Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) Structure", Proc. SPIE 0341, Real-Time Signal Processing V, (28 December 1982);

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