Pattern Nonuniformities Of Imaging Charge Injection Device Arrays Due To Distributed Resistance Capacitance Effects

C.H. Chen; D. N. Pocock

doi:10.1117/12.933716

28 December 1982 Pattern Nonuniformities Of Imaging Charge Injection Device Arrays Due To Distributed Resistance Capacitance Effects

C.H. Chen, D. N. Pocock

Author Affiliations +

Proceedings Volume 0341, Real-Time Signal Processing V; (1982) https://doi.org/10.1117/12.933716
Event: 1982 Technical Symposium East, 1982, Arlington, United States

Abstract

A potential source of response nonuniformities of imaging CID's is attributed to the transient behavior of the distributed resistance capacitance (DRC) network associated with the row and column electrodes. The DRC network is evidenced and characterized by the measurement of frequency-dependent admittance. Simulated response nonuniformities are compared favorably to experimentally observed patterns of an InSb CID array. The characteristics and their imposed limitations on the array size, pixel density, and readout rate are discussed.

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C.H. Chen and D. N. Pocock "Pattern Nonuniformities Of Imaging Charge Injection Device Arrays Due To Distributed Resistance Capacitance Effects", Proc. SPIE 0341, Real-Time Signal Processing V, (28 December 1982); https://doi.org/10.1117/12.933716

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