15 October 1982 Ellipsometric Accuracy And The Principal Angle Of Incidence
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Proceedings Volume 0342, Integrated Circuit Metrology I; (1982); doi: 10.1117/12.933688
Event: 1982 Technical Symposium East, 1982, Arlington, United States
Abstract
The effects of improving the accuracy of the angle of incidence on the ellipsometric determination of thickness and refractive index of oxide and nitride films on a silicon substrate are analyzed. It is found that the accuracy of a determination of a film's parameters, thickness and refractive index, depends as much or more on the accuracy of the angle of incidence measurement as on the accuracy of the measurement of the ellipsometric angles Δ and ψ. If measurements of Δ and ψ are made close to the principal angle of incidence, the accuracy of the determined film parameters can be improved by measuring the incident angle to an accuracy better than Δ and ψ. This is especially true for thin films of oxide less than a few tens of nanometers. Because of the higher refractive index of silicon nitride relative to silicon dioxide, a nitride film's thickness can be determined more accurately than an oxide film's thickness. Therefore, silicon nitride may make a good candidate film for a standard thickness sample.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deane Chandler-Horowitz, "Ellipsometric Accuracy And The Principal Angle Of Incidence", Proc. SPIE 0342, Integrated Circuit Metrology I, (15 October 1982); doi: 10.1117/12.933688; https://doi.org/10.1117/12.933688
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KEYWORDS
Oxides

Refractive index

Silicon films

Thin films

Silicon

Integrated circuits

Metrology

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