Indium antimonide (InSb) photodiode technology has progressed to the point where charge integration can now be accomplished directly on the diode junction capacitance. Recent development work at the jet Propulsion Laboratory has combined a 128-element linear array of InSb detectors with a silicon FET switched multiplexer (MUX) and the JFET preamp for readout. This device is characterized by a relatively low read noise of ',1200 electrons, large pixel charge storage capacity of 2 x 107 electrons, 2-3% responsivity nonuniformity, high quantum efficiency (≥0.8, and an NEP of ≈3 x 10-17W /Hz at 77 K.
"Integrating 128 Element InSb Array: Recent Results", Proc. SPIE 0345, Advanced Multispectral Remote Sensing Technology and Applications, (23 November 1982); doi: 10.1117/12.933783; https://doi.org/10.1117/12.933783