15 September 1982 Creation Of Thin, Highly Doped Layers For Ohmic Contact Formation On N-Type GAAS And SI
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Proceedings Volume 0346, Thin Film Technologies and Special Applications; (1982); doi: 10.1117/12.933796
Event: 1982 Technical Symposium East, 1982, Arlington, United States
Abstract
Ohmic contacts to semiconductors are usually formed between a metal and a highly doped semiconductor layer. A number of techniques are used to produce such layers: alloying of multilayer contact-metal structures containing a dopant, growth of epitaxial layers, shallow diffusion, and shallow ion implantation. All of these methods require the application of elevated temperatures, usually done by furnace annealing. The trends towards very large scale integration (VLSI) and very high speed integrated circuits (VHSIC) have put more stringent requirements on structural and chemical uniformity, on dimensional accuracy, and on specific contact resistance of Ohmic contacts than can be met easily and routinely with standard methods. Substantial improvements of Ohmic-contact properties have been achieved during the past years by employing novel processing techniques such as molecular beam epitaxy, laser or electron-beam annealing.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gisela Eckhardt, "Creation Of Thin, Highly Doped Layers For Ohmic Contact Formation On N-Type GAAS And SI", Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); doi: 10.1117/12.933796; https://doi.org/10.1117/12.933796
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KEYWORDS
Annealing

Metals

Gallium arsenide

Resistance

Semiconductors

Silicon

Interfaces

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