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15 September 1982 Microstructure In A-GaAs:H Alloys And Its Correlation With The Electronic Properties
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Proceedings Volume 0346, Thin Film Technologies and Special Applications; (1982) https://doi.org/10.1117/12.933797
Event: 1982 Technical Symposium East, 1982, Arlington, United States
Abstract
Hydrogenated alloys of a-GaAs have been prepared by r.f. sputtering in a mixture of argon and hydrogen at several partial pressures, substrate temperatures and r.f. powers. We report the results of a systematic investigation of the microstructural properties of these films by SEM and TEM, and attempt a correlation with the deposition parameters and other electronic properties.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. K. Paul, J. Blake, G. Moddel, and William Paul "Microstructure In A-GaAs:H Alloys And Its Correlation With The Electronic Properties", Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); https://doi.org/10.1117/12.933797
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