This paper describes the generalities of molecular beam epitaxy (MBE); it is intended for those interested rather than involved in MBE. MBE has been applied to the growth of thin films of a variety of materials: III-V semiconductors, II-VI's, IV-VI's, silicon and germanium, metals and insulators. The early workl on MBE, and the majority of the effort since then,2,3 has been on the growth of GaAs and other III V's, thus this paper will concentrate on that area.
Gary W. Wicks,
"Thin Film Growth By Molecular Beam Epitaxy", Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); doi: 10.1117/12.933786; https://doi.org/10.1117/12.933786