15 September 1982 Thin Film Growth By Molecular Beam Epitaxy
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Proceedings Volume 0346, Thin Film Technologies and Special Applications; (1982) https://doi.org/10.1117/12.933786
Event: 1982 Technical Symposium East, 1982, Arlington, United States
Abstract
This paper describes the generalities of molecular beam epitaxy (MBE); it is intended for those interested rather than involved in MBE. MBE has been applied to the growth of thin films of a variety of materials: III-V semiconductors, II-VI's, IV-VI's, silicon and germanium, metals and insulators. The early workl on MBE, and the majority of the effort since then,2,3 has been on the growth of GaAs and other III V's, thus this paper will concentrate on that area.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary W. Wicks, Gary W. Wicks, } "Thin Film Growth By Molecular Beam Epitaxy", Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); doi: 10.1117/12.933786; https://doi.org/10.1117/12.933786
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