A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (>10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.
John R. Barrett,
Murzban D. Jhabvala,
"Lead Sulfide-Silicon MOSFET Infrared Focal Plane Development", Proc. SPIE 0350, Focal Plane Methodologies III, (10 August 1983); doi: 10.1117/12.933894; https://doi.org/10.1117/12.933894