22 March 1983 LEDs And PIN FET Receivers For Long Haul Fiber Optic Communication Systems
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Abstract
The fabrication and performance of GaInAsP/InP LEDs emitting at 1.3 microns is described. These devices are hermetically sealed into microwave pill packages and the use of micro-lens coupling enables power outputs up to -13 dBm to be achieved. Detection of 1.3 micrcn radiation is achieved using the PIN FET approach in which a GaInAs/GaAs photodiode and GaAs FET chip are assembled on a thick film hybrid circuit and hermetically sealed with a fibre pigtail into a metal DIL package. Device performance and construction is detailed. Current best performance of -52.4 dBm and -45 dBm at 41 and 160 Mbauds respectively have been achieved. Life test results are reviewed. These components are currently being used in transmission systems being installed by Plessey Telecommunications Ltd.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. W. Mabbitt, A. W. Mabbitt, J. W. Burgess, J. W. Burgess, A. C. Carter, A. C. Carter, D. Jenkins, D. Jenkins, } "LEDs And PIN FET Receivers For Long Haul Fiber Optic Communication Systems", Proc. SPIE 0355, Fiber Optics: Short-Haul and Long-Haul Measurements and Applications I, (22 March 1983); doi: 10.1117/12.934010; https://doi.org/10.1117/12.934010
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