Characteristics Of InSb Photovoltaic Detectors At 77K And Below

J. T. Wimmers; D. S. Smith

doi:10.1117/12.934189

16 August 1983 Characteristics Of InSb Photovoltaic Detectors At 77K And Below

J. T. Wimmers, D. S. Smith

Proceedings Volume 0364, Technologies of Cryogenically Cooled Sensors and Fourier Transform Spectrometers II; (1983) https://doi.org/10.1117/12.934189
Event: 26th Annual Technical Symposium, 1982, San Diego, United States

Abstract

Indium antimonide photovoltaic detector parameters which are critical to the design of high-performance focal planes have been measured and are reported. Detector capacitances as a function of voltage, area and temperature are presented and the data is shown to agree well with the abrupt junction model. Resistance-area products as a function of temperature have also been measured; values as high as 1011Ω -cm2 at 50 K. are reported. In addition, fabrication techniques are discussed which can minimize additional capacitances to the diode, as well as maximize the area definition.

Citation Download Citation

J. T. Wimmers and D. S. Smith "Characteristics Of InSb Photovoltaic Detectors At 77K And Below", Proc. SPIE 0364, Technologies of Cryogenically Cooled Sensors and Fourier Transform Spectrometers II, (16 August 1983); https://doi.org/10.1117/12.934189

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