16 August 1983 Characteristics Of InSb Photovoltaic Detectors At 77K And Below
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Abstract
Indium antimonide photovoltaic detector parameters which are critical to the design of high-performance focal planes have been measured and are reported. Detector capacitances as a function of voltage, area and temperature are presented and the data is shown to agree well with the abrupt junction model. Resistance-area products as a function of temperature have also been measured; values as high as 1011Ω -cm2 at 50 K. are reported. In addition, fabrication techniques are discussed which can minimize additional capacitances to the diode, as well as maximize the area definition.
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J. T. Wimmers, J. T. Wimmers, D. S. Smith, D. S. Smith, "Characteristics Of InSb Photovoltaic Detectors At 77K And Below", Proc. SPIE 0364, Technologies of Cryogenically Cooled Sensors and Fourier Transform Spectrometers II, (16 August 1983); doi: 10.1117/12.934189; https://doi.org/10.1117/12.934189
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