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29 March 1983 Advances In The Infrared Microscopy Of Electronic Materials
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Proceedings Volume 0368, Microscopy: Techniques and Capabilities; (1983)
Event: Microscopy-Techniques and Capabilities, 1982, London, United Kingdom
Crystalline semiconductor materials often contain structural defects which can influence adversely both the behaviour during processing and the ultimate performance of devices fabricated from them. Traditionally structural perfections have been assessed by the optical microscopy of chemically etched surfaces and augmented by X-ray and electron microscopic techniques when detailed analyses are required. Polarised infrared microscopy (PIM) is emerging as a non-destructive technique for the real time imaging of defects ranging in size from locally strained regions several millimetres across, down to single dislocations. This paper discusses the present state of PIM development, with examples taken principally from the field of opto-electronic materials. The performance of a polarizing microscope operating at near-infrared wavelengths is described for three distinctive imaging modes. In these modes, defects which absorb the illumination or cause stress birefringence or non-radiative carrier recombination in photoluminscent materials respectively are revealed with an optimum resolution of about 1 μm.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles R. Elliott, John C. Regnault, and Beverley T. Meggitt "Advances In The Infrared Microscopy Of Electronic Materials", Proc. SPIE 0368, Microscopy: Techniques and Capabilities, (29 March 1983);

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