Ultraviolet (UV) Photochemical Doping Of Silicon

K. G. Ibbs; M. L. Lloyd; R. J. Chad

doi:10.1117/12.934394

16 June 1983 Ultraviolet (UV) Photochemical Doping Of Silicon

K. G. Ibbs, M. L. Lloyd, R. J. Chad

Proceedings Volume 0369, Max Born Centenary Conf; (1983) https://doi.org/10.1117/12.934394
Event: The Max Born Centenary Conference, 1982, Edinburgh, United Kingdom

Abstract

This paper describes a method of producing p-n junctions in silicon using an ArF laser to dissociate triethyl boron. Junction depths of 0→0.8 μm and peak electrically active dopant concentrations of 8 x 1018 → 2 x 1020 have been measured.

Citation Download Citation

K. G. Ibbs, M. L. Lloyd, and R. J. Chad "Ultraviolet (UV) Photochemical Doping Of Silicon", Proc. SPIE 0369, Max Born Centenary Conf, (16 June 1983); https://doi.org/10.1117/12.934394

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