Dependence Of The Diffraction Efficiency Of Bi12SiO[sub]20[/sub] On Recording Parameters

J. D. Gaskill; P. Lam; J. C. Wyant

doi:10.1117/12.934893

13 December 1983 Dependence Of The Diffraction Efficiency Of Bi₁₂SiO20 On Recording Parameters

J. D. Gaskill, P. Lam, J. C. Wyant

Proceedings Volume 0370, Holographic Data Nondestructive Testing; (1983) https://doi.org/10.1117/12.934893
Event: Holographic Data Nondestructive Testing, 1982, Dubrovnik, Croatia

Abstract

The dependence of the diffraction efficiency and hologram writing rate of Bi₁₂Si0₂₀ crystals on bias voltage and write-beam irradiance was investigated. The diffraction efficiency was found to increase with increasing bias voltage, but displayed very little dependence on write-beam irradiance for bias voltages of 5 kV or less. The hologram writing rate was found to increase with increasing bias voltage and increasing write-beam irradiance.

Citation Download Citation

J. D. Gaskill, P. Lam, and J. C. Wyant "Dependence Of The Diffraction Efficiency Of Bi₁₂SiO20 On Recording Parameters", Proc. SPIE 0370, Holographic Data Nondestructive Testing, (13 December 1983); https://doi.org/10.1117/12.934893

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