The laser blowing of MoSi2/Poly-n + fuse links is reported. The polycide links were successfully blown under 10K Å of PSG (phospho silicate glass used for isolation between the link and the aluminum) at laser power levels comparable to those used for standard poly link vaporization. Also, the size of the crater in the PSG, produced by the expanding gases associated with link vaporization, was found to be less than that for standard poly links. Laser power levels were found which gave both a near unity blowing probability and produced no substrate damage when the link was located on top of 7-10K Å of field oxide. The successful blowing of silicide links is very important with respect to the use of both laser redundancy and silicides in VLSI technology.