9 August 1983 Circuit Simulation Of Three-Dimensional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Device Structures In Beam-Recrystallized Polysilicon Films
Author Affiliations +
Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934950
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
Some new device structures are proposed in which a set of folding and rotation operations is used to transform planar MOSFET device configurations into three-dimensional structures in beam-recrystallized polysilicon films. Some of the resulting devices use both sides of a recrystallized film for MOSFET device fabrication, while others use a single gate to modulate the surfaces of two separate films simultaneously. Preliminary circuit simulations have been performed to study the speed and yield possibilities of several basic-circuits.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James F. Gibbons, Martin D. Giles, Kwing F. Lee, James T. Walker, "Circuit Simulation Of Three-Dimensional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Device Structures In Beam-Recrystallized Polysilicon Films", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934950; https://doi.org/10.1117/12.934950
PROCEEDINGS
4 PAGES


SHARE
Back to Top