9 August 1983 Circuit Simulation Of Three-Dimensional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Device Structures In Beam-Recrystallized Polysilicon Films
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Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934950
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
Some new device structures are proposed in which a set of folding and rotation operations is used to transform planar MOSFET device configurations into three-dimensional structures in beam-recrystallized polysilicon films. Some of the resulting devices use both sides of a recrystallized film for MOSFET device fabrication, while others use a single gate to modulate the surfaces of two separate films simultaneously. Preliminary circuit simulations have been performed to study the speed and yield possibilities of several basic-circuits.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James F. Gibbons, James F. Gibbons, Martin D. Giles, Martin D. Giles, Kwing F. Lee, Kwing F. Lee, James T. Walker, James T. Walker, } "Circuit Simulation Of Three-Dimensional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Device Structures In Beam-Recrystallized Polysilicon Films", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934950; https://doi.org/10.1117/12.934950
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