Paper
9 August 1983 Conduction Processes In Polysilicon: Effects Of Laser Restructuring
A. N. Khondker, R. R. Shah, D. M. Kim
Author Affiliations +
Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934953
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
3-D integration of semiconductor devices will ultimately be realized via the use of laser or electron beam processed polysilicon. Although it is desirable to generate single crystal regions from polycrystalline silicon deposited in appropriate locations on a device structure during the course of device fabrication, that may not always be feasible for various reasons. It is, therefore, absolutely imperative to understand the performance of devices fabricated in either very large grain polysilicon or in near single crystal material containing defects and grain boundaries. In order to model devices fabricated in polysilicon with arbitrary grain size and trap density distribution, we have developed a conceptually novel approach to describe conduction in polysilicon. This methodology has been used to investigate the effects of laser restructuring of polysilicon.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. N. Khondker, R. R. Shah, and D. M. Kim "Conduction Processes In Polysilicon: Effects Of Laser Restructuring", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); https://doi.org/10.1117/12.934953
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KEYWORDS
Crystals

Doping

Diffusion

Amorphous semiconductors

Scattering

Temperature metrology

Instrument modeling

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