Electronic Properties Of Grain Boundaries In Polycrystalline Silicon

E. S. Yang; E. Poon; H. L. Evans; W. Hwang; J. S. Song; C. M. Wu

doi:10.1117/12.934955

9 August 1983 Electronic Properties Of Grain Boundaries In Polycrystalline Silicon

E. S. Yang, E. Poon, H. L. Evans, W. Hwang, J. S. Song, C. M. Wu

Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934955
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States

Abstract

The electrical characteristics of grain boundaries in polycrystalline silicon have been investigated. Experiments were performed using a focused laser beam to measure the GB parameters. Theoretical models of phonon-assisted and charge scattering processes are presented in relation to attenuation of the thermionic emission. The results indicate that the GB states behave as extrinsic impurity states which are not sensitive to the misorientation angle between grains. Both majority and minority carrier behavior are described.

Citation Download Citation

E. S. Yang, E. Poon, H. L. Evans, W. Hwang, J. S. Song, and C. M. Wu "Electronic Properties Of Grain Boundaries In Polycrystalline Silicon", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); https://doi.org/10.1117/12.934955

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