9 August 1983 Gas Immersion Laser Diffusion (GILDing)
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Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934943
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
Gas immersion laser diffusion (GILDing) is a novel method for doping semiconductor materials directly from a dopant-containing cover gas. It takes advantage both of the rapid diffusion of the dopant into a molten semiconductor and of the rapid liquid phase epitaxial regrowth of the same semiconductor as a high quality single crystal material.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert J. Pressley, "Gas Immersion Laser Diffusion (GILDing)", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934943; https://doi.org/10.1117/12.934943
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