9 August 1983 Gas Immersion Laser Diffusion (GILDing)
Author Affiliations +
Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934943
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
Gas immersion laser diffusion (GILDing) is a novel method for doping semiconductor materials directly from a dopant-containing cover gas. It takes advantage both of the rapid diffusion of the dopant into a molten semiconductor and of the rapid liquid phase epitaxial regrowth of the same semiconductor as a high quality single crystal material.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert J. Pressley, Robert J. Pressley, } "Gas Immersion Laser Diffusion (GILDing)", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934943; https://doi.org/10.1117/12.934943
PROCEEDINGS
2 PAGES


SHARE
RELATED CONTENT

Laser Processing Research For IC Manufacture
Proceedings of SPIE (August 04 1986)
Solid-Phase Laser Doping Of Silicon
Proceedings of SPIE (May 17 1989)
Pulsed laser technology in microelectronics
Proceedings of SPIE (May 31 1990)
CO2 laser doping of Si layers with use of B2O3...
Proceedings of SPIE (August 23 2001)

Back to Top