9 August 1983 Laser Activated Flow For Integrated Circuit Fabrication
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Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934945
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
A method of planarizing integrated circuit devices which is compatible with VLSI requirements is presented. This method utilizes either cw or pulsed radiation from a tunable CO2 laser to selectively heat, for example, a thin layer of phosphosilicate glass causing it to flow. Flow, which is characterized as a decrease in glass viscosity sufficient to provide smoothing of the device topography, occurs without adversely affecting the under-lying or exposed device materials. Application of the laser activated flow method to the fabrication of integrated circuits with multilevel metallization systems is demonstrated.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Delfino, M. Delfino, } "Laser Activated Flow For Integrated Circuit Fabrication", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934945; https://doi.org/10.1117/12.934945
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