9 August 1983 Novel Laser Scanning Techniques For Si-On-Insulator Devices
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Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934938
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
Recent developments are reported for the conversion of polysilicon layers on SiO2 into device-worthy, large grain or single crystalline Si-on-Insulator material, using a cw Ar laser. The advantages of beam shaping and of oscillation of the growth front are shown. Finally, the utility of rapid laser scanning (1-10 m/sec) is reported, and the practical limitatibns of this technique are defined.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. E. Trimble, G. K. Celler, "Novel Laser Scanning Techniques For Si-On-Insulator Devices", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934938; https://doi.org/10.1117/12.934938
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