Recent developments are reported for the conversion of polysilicon layers on SiO2 into device-worthy, large grain or single crystalline Si-on-Insulator material, using a cw Ar laser. The advantages of beam shaping and of oscillation of the growth front are shown. Finally, the utility of rapid laser scanning (1-10 m/sec) is reported, and the practical limitatibns of this technique are defined.
L. E. Trimble,
G. K. Celler,
"Novel Laser Scanning Techniques For Si-On-Insulator Devices", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934938; https://doi.org/10.1117/12.934938