Translator Disclaimer
8 November 1983 Deposited Dielectrics For III-V Semiconducting Devices
Author Affiliations +
Proceedings Volume 0387, Technology of Stratified Media; (1983) https://doi.org/10.1117/12.934986
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
Options for coating III-V semiconducting material with insulating layers are discussed with regard to the physical and electrical properties of the deposited layers. Emphasis is on those techniques which minimize charging effects in the interfacial layers. Results on gallium arsenide, indium phosphide, indium arsenide, indium antimonide and indium gallium arsenide are discussed.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry G. Meiners "Deposited Dielectrics For III-V Semiconducting Devices", Proc. SPIE 0387, Technology of Stratified Media, (8 November 1983); https://doi.org/10.1117/12.934986
PROCEEDINGS
11 PAGES


SHARE
Advertisement
Advertisement
Back to Top