Applications Of Focused Ion Beams

Alfred Wagner

doi:10.1117/12.935108

7 November 1983 Applications Of Focused Ion Beams

Alfred Wagner

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935108
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

A finely focused ion beam system is described. Beams of Ga, In, and Au ions emitted from a liquid metal ion source are routinely focused to spot diameters of ~0.1 to 3.0 μm at a current density of ~0.5 A/cm² and a beam energy of 20 keV. Focused beams with energies of 1 to 30 keV have also been produced. Three applications are discussed: 1) scanning ion microscopy, 2) mask repair, and 3) ion beam lithography. Scanning ion images illustrating topographic and chemical contrast are presented. The repair of opaque and clear defects in optical masks, and opaque defects in X-ray masks is shown. Defects are imaged with the ion beam and removed by sputter erosion. Edge reconstruction of 0.5μm features is demonstrated. Most repairs take less than 10 sec per μm². The advantages and limitations of ion beams for lithography are discussed.

Citation Download Citation

Alfred Wagner "Applications Of Focused Ion Beams", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935108

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