7 November 1983 Maskless Fabrication Using Focused Ion Beams
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Abstract
Maskless patterning of materials using focused ion beams are important to simplify device processing and to develope full maskless processing. We have shown that a high speed maskless patterning can be done using ion beam assisted etching and ion beam modification techniques. In this paper, basic characteristics of various liquid metal alloy ion sources and a mass separatted focused ion beam system, and maskless patterning techniques for GaAs, Cr films and other materials are reported.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenji Gamo, Kenji Gamo, Susumu Namba, Susumu Namba, } "Maskless Fabrication Using Focused Ion Beams", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935107; https://doi.org/10.1117/12.935107
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