7 November 1983 Multilayer Resist Systems Using Polysiloxanes As Etch Masks
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Radiation imageable polysiloxanes have many outstanding properties, among which are their resistance to etching in oxygen plasmas, the ability to apply them from solution by spinning or spraying and their high thermal stability. This paper describes the use of these materials in generating high aspect ratio patterns using the polysiloxanes in two and three layer systems.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Paraszczak, J. Paraszczak, J. Shaw, J. Shaw, M. Hatzakis, M. Hatzakis, E. Babich, E. Babich, E. Arthur, E. Arthur, } "Multilayer Resist Systems Using Polysiloxanes As Etch Masks", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935088; https://doi.org/10.1117/12.935088

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