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7 November 1983 Options And Oportunities With Inorganic Photoresist Systems
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Abstract
The submicron lithographic capability of several compositions of GeSe have been most conclusively shown by Tai and his co-workers.1 Others2,3,4 have shown that As2S3 and some of the other chalcogenides exhibit similar potential. In this paper we shall report on an extensive investigation of As2S3,.As2Se3 and GeSe2 used in conjunction with a variety of Ag-bearing materials such as evaporated Ag, Ag2S, Ag2Se and Ag2Te as well as with chemically applied Ag-bearing layers. We shall describe both wet and dry processing tech-niques used with these materials. We shall assess the submicron lithographic capabilities, processing latitudes and results obtained with the matrix combinations of these materials and show our experimental results.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. A. Lis, J. M . Lavine, G. M . Goldberg, and J. I. Masters "Options And Oportunities With Inorganic Photoresist Systems", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935091
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