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7 November 1983 Prospects For The 1:1 Electron Image Projector
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Abstract
The 1:1 electron image projector, with its inherent advantages of high resolution and high throughput, has the potential to perform the lithography of VLSI circuits with sub-micron dimensions at an economic price. We show here that the registration accuracy of the technique can match its high resolution capabilities. Misregistration arising from global alignment errors, mask errors, linewidth variation, wafer bowing, deflection distortion and wafer holder variations are measured using electrical techniques. The total misregistration between two levels, to be expected from a combination of all these sources amounts to a standard deviation of 0.12μm.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Ward, A. R. Franklin, P. Gould, M. J. Plummer, and I. H. Lewin "Prospects For The 1:1 Electron Image Projector", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935115
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