Status Of X-Ray Lithography At H-P

A. P. Neukermans

doi:10.1117/12.935099

7 November 1983 Status Of X-Ray Lithography At H-P

A. P. Neukermans

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935099
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

The various aspects of X-ray lithography at H-P in terms of mask-fabrication, resist development, alignment systems and source development are reviewed in their present status. Masks are being developed, flat within one micron, and with very low substrate defect density. PCMS is described as an X-ray resist with moderate sensitivity, but very good physical properties. Advanced source cooling techniques are expected to allow power densities up to 60KW/cm², enhancing the source brightness. A very compact automatic exposure system is described, with alignment accuracy of .15 micron RMS.

Citation Download Citation

A. P. Neukermans "Status Of X-Ray Lithography At H-P", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935099

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available