7 November 1983 Submicron Lithography Radiation Damage In Silicon And Gallium Arsenide ICs
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Abstract
This paper presents data comparing the radiation hardness of silicon and GaAs devices. Data presented in conjunction with this paper suggest that, when state-of-the-art electron-beam lithography is used to fabricate devices, GaAs offers a radiation-hardness advantage for certain specialty applications, including radiation-hardened spacecraft electronics.
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D. Howard Phillips, D. Howard Phillips, } "Submicron Lithography Radiation Damage In Silicon And Gallium Arsenide ICs", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935096; https://doi.org/10.1117/12.935096
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