7 November 1983 Submicron Lithography Radiation Damage In Silicon And Gallium Arsenide ICs
Author Affiliations +
Abstract
This paper presents data comparing the radiation hardness of silicon and GaAs devices. Data presented in conjunction with this paper suggest that, when state-of-the-art electron-beam lithography is used to fabricate devices, GaAs offers a radiation-hardness advantage for certain specialty applications, including radiation-hardened spacecraft electronics.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Howard Phillips, "Submicron Lithography Radiation Damage In Silicon And Gallium Arsenide ICs", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935096; https://doi.org/10.1117/12.935096
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top