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7 November 1983 Submicron Optical Lithography Using Inorganic Resists
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The one-dimensional light intensity distributions for 10X, NA = 0.28 and 0.35 lenses with coherence of S = 0.7 at 436nm have been calculated using SAMPLE for linewidths from 2.0 to 0.4 microns. From these data, we obtain the optical contrast with varying defocus and the intensity of the light at the line edge for isolated lines, isolated spaces and equal lines and spaces. These data suggest that the presently available optical capability outstrips the capability of polymeric resist systems. It is argued that the high-gamma chalcogenide systems can better utilize this optical capability to extend lithography into the submicron regime. Some of the other advantages of the chalcogenides are the elimination of the standing wave effect, broad spectral sensitivity and the possibility of all dry processing. A simple physical model of the Ag-photodoping mechanism, useful in dealing with some of the experimental observeables, is also presented.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Lavine, S. A. Lis, and J. I. Masters "Submicron Optical Lithography Using Inorganic Resists", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983);

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