Theoretical Model For Photoelectron Transport In X-Ray Lithography Systems

J. C. Garth

doi:10.1117/12.935097

7 November 1983 Theoretical Model For Photoelectron Transport In X-Ray Lithography Systems

J. C. Garth

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935097
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

We have developed a theoretical model for calculating the dose received by a resist behind an x-ray absorbing mask in an x-ray lithography system. The model enables the dose-depth profile due to photoelectrons entering the resist from the mask to be predicted as a function of x-ray target material, excitation voltage, mask material and thickness, and chemical composition of the resist. As an application, we have calculated the dose profile in the resist PBS next to a Au mask irradiated by x-rays from Ag and Al targets operated at 10 kilovolt beam voltage. The characteristic line and continuum spectrum from the targets are computed, the absorption by the Au mask obtained, and an approximate photoelectron and Auger electron spectrum in the gold and PBS is evaluated. The dose-depth curve next to the gold-resist interface is found using the analytic electron transport model developed by Burke and Garth (1979). The calculations show that the dose profiles obtained using bremsstrahlung-produced electrons extend deeper than profiles than are computed from characteristic photon radiation alone. At 10 kV, this effect is found to be much greater for Ag than for Al.

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J. C. Garth "Theoretical Model For Photoelectron Transport In X-Ray Lithography Systems", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935097

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KEYWORDS

Gold

Aluminum

Silver

X-rays

Electron transport

Absorption

Photomasks

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