X-Ray Lithography On Beam Line III-IV (3°) At SSRL

R. Tatchyn; I. Lindau; Y. G. Su; R. Gutcheck; J. Muray; P. L. Csonka

doi:10.1117/12.935102

7 November 1983 X-Ray Lithography On Beam Line III-IV (3°) At SSRL

R. Tatchyn, I. Lindau, Y. G. Su, R. Gutcheck, J. Muray, P. L. Csonka

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935102
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

In recent months at SSRL, we have tested the feasibility of in vacuo x-ray lithographic studies using synchrotron radiation by exposing the resists PMMA and FBM-l20 to the white-light radiation in Beam Line (3°) during parasitic operation. Frequency selection was performed with Al and Ti filters, and the results of the experiment and their implications are presented in this report. A brief discussion of the advantages of synchrotron radiation for high-resolution x-ray microlithography research is also presented.

Citation Download Citation

R. Tatchyn, I. Lindau, Y. G. Su, R. Gutcheck, J. Muray, and P. L. Csonka "X-Ray Lithography On Beam Line III-IV (3°) At SSRL", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935102

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