7 November 1983 X-Ray Lithography On Beam Line III-IV (3°) At SSRL
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Abstract
In recent months at SSRL, we have tested the feasibility of in vacuo x-ray lithographic studies using synchrotron radiation by exposing the resists PMMA and FBM-l20 to the white-light radiation in Beam Line (3°) during parasitic operation. Frequency selection was performed with Al and Ti filters, and the results of the experiment and their implications are presented in this report. A brief discussion of the advantages of synchrotron radiation for high-resolution x-ray microlithography research is also presented.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Tatchyn, I. Lindau, Y. G. Su, R. Gutcheck, J. Muray, P. L. Csonka, "X-Ray Lithography On Beam Line III-IV (3°) At SSRL", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935102; https://doi.org/10.1117/12.935102
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