7 November 1983 X-Ray Lithography On Beam Line III-IV (3°) At SSRL
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Abstract
In recent months at SSRL, we have tested the feasibility of in vacuo x-ray lithographic studies using synchrotron radiation by exposing the resists PMMA and FBM-l20 to the white-light radiation in Beam Line (3°) during parasitic operation. Frequency selection was performed with Al and Ti filters, and the results of the experiment and their implications are presented in this report. A brief discussion of the advantages of synchrotron radiation for high-resolution x-ray microlithography research is also presented.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Tatchyn, R. Tatchyn, I. Lindau, I. Lindau, Y. G. Su, Y. G. Su, R. Gutcheck, R. Gutcheck, J. Muray, J. Muray, P. L. Csonka, P. L. Csonka, } "X-Ray Lithography On Beam Line III-IV (3°) At SSRL", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935102; https://doi.org/10.1117/12.935102
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