7 November 1983 A New Negative Resist For Deep UV Microlithography
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Abstract
The production of VLSI semiconductor devices requires the patterning of circuits with minimum linewidths under 2 microns. Deep UV lithography utilizing radiation in the 220-280nm regime has the capability of meeting this resolution requirement in a production environment. Conventional photoresists have not adequate resolution and sensitivity in the deep UV. This paper presents data on a negative acting deep UV resist, WX303, which combines good photospeed with high resolution. Recent studies with WX303 imaged on a Micralign 500 operating in the UV-2 mode, demonstrated the submicron capabilities of this resist. Data is also presented on WX303 image profile modification by changes in development time and exposure energy.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Toukhy, M. A. Toukhy, R. F. Leonard, R. F. Leonard, } "A New Negative Resist For Deep UV Microlithography", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); doi: 10.1117/12.935135; https://doi.org/10.1117/12.935135
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