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7 November 1983 A Two Layer Photoresist Process In A Production Environment
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Abstract
A manufacturable, high resolution photoresist process is described. This process was developed to increase production margins on the 1.0 μm geometries used in the Hewlett Packard NMOS III process: This was accomplished through a modification of the portable conformal mask (PCM) technique,2 which drastically reduced substrate effects on GCA. wafer stepper performance by the introduction of a bleachable dye in the bottom photoresist layer.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Bartlett, G. Hillis, M. Chen, R. Trutna, and M. Watts "A Two Layer Photoresist Process In A Production Environment", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); https://doi.org/10.1117/12.935121
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