7 November 1983 Contrast Enhancement - A Route To Submicron Optical Lithography
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A new method for the production of submicron photopatterns is described. Good quality images are obtainable even under very low contrast illumination through the use of photobleachable materials in conjunction with standard photoresists. The method consists of applying a thin photobleachable layer to the photoresist surface prior to the conventional exposure step. The bleachable layer (contrast-enhancing layer or CEL) is subsequently removed and the resist developed in the ordinary way. Examples of vertical-walled submicron patterns fabricated using an Optimetrix 10:1 DSW system demonstrate that the CEL process compares well with other advanced photolithographic techniques.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul R. West, Paul R. West, Bruce F. Griffing, Bruce F. Griffing, } "Contrast Enhancement - A Route To Submicron Optical Lithography", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); doi: 10.1117/12.935119; https://doi.org/10.1117/12.935119

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