7 November 1983 Improved Novolak-Based Photoresist System For Very Large Scale Integration (VLSI) Lithography.
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A discussion of the general parameters used in resist formulation is given. Characterization of the resist and its metal and non-metal developers includes: resist chemistry, coating properties and film thickness control, photospeed at two major wavelengths, contrast parameters, resolution capability, thermal flow properties, dry etch resistance, adhesion and removal characteristics. The new system emphasizes a higher degree of manufacturing control to increase yields in high resolution device manufacturing.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. P. Alvarez, F. P. Alvarez, D. J. Elliott, D. J. Elliott, H. F. Sandford, H. F. Sandford, M. W. Legenza, M. W. Legenza, } "Improved Novolak-Based Photoresist System For Very Large Scale Integration (VLSI) Lithography.", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); doi: 10.1117/12.935133; https://doi.org/10.1117/12.935133


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