7 November 1983 Manual Alignment Results Using The Perkin-Elmer M341 And Electron-Beam Masks
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Abstract
Manual alignment data had been collected for the new Perkin-Elmer M341 in a pilot line operation. The alignment data were measured by using an electrical test structure which was incorporated in an E-beam mask set, together with a product device, to monitor the alignment between two critical mask layers. The results were the actual overall misalignment data on devices which were processed in a typical semiconductor IC fabrication environment. A new analytical method was used to analyze the alignment data to identify the contribution from translation, rotation, expansion, scan, or cross-scan components. The contribution from the E-beam masks was also analyzed.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alex Wat, Alex Wat, Kong-Chen Chen, Kong-Chen Chen, } "Manual Alignment Results Using The Perkin-Elmer M341 And Electron-Beam Masks", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); doi: 10.1117/12.935122; https://doi.org/10.1117/12.935122
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