30 November 1983 Cd Hg Te (1.3 µm - 1.55 µm) Avalanche Photodiode
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Proceedings Volume 0395, Advanced Infrared Sensor Technology; (1983) https://doi.org/10.1117/12.935176
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland
The particular Cd0.7 Hg0.3Te band structure:almost equality of band gap and spin orbit splitting, provides good ionization properties to this alloy : a high ionization coefficients ratio is expected. The devices elaboration is made by planar technology. A N+/N/P+ structure is achieved by ions implantation followed by a diffusion process. A diffused guard ring allows to avoid surface and junction edge effects. The I (V) characteristic shows a breakdown voltage (VB) of about 100 V. The dark current at 0.95 VB, amounts 100nA.Photodiodes sensitivity is typiclly of 0.7. A/W when M=1.Multiplication coefficients as high as 40 have been measured, the photoresponse spatial homogeneity in gain mode has been also controlled with a lOμm size spot : no microplasma effect have been observed. Photodetectors sensitivity, measured at 500 MHz, remains identical in avalanche operating mode. Good linearity is obtained when plotting P-N schottky noise versus light intensity No excess noise was observed. The study of the avalanche photodiode noise, synchronous with 1.3. μm DEL emission, at 30 MHz with a 1 MHz bandwith has been carried out in relation to the multiplication factor, and has led to an estimation of the ionization coefficient ratio.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Meslage, G. Pichard, M. Fragnon, M. Royer, M. Nguyen Duy, C. Boisrobert, D. Morvan, "Cd Hg Te (1.3 µm - 1.55 µm) Avalanche Photodiode", Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); doi: 10.1117/12.935176; https://doi.org/10.1117/12.935176

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