30 November 1983 Ge And InGaAs Avalanche Photodiodes For Long Wavelength Optical Communication Use
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Proceedings Volume 0395, Advanced Infrared Sensor Technology; (1983) https://doi.org/10.1117/12.935175
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland
Abstract
Device structure parameters governing APD performances are discussed and optimum conditions are elucidated for both Ge APDs and heterostructure InGaAs APDs. Two types of Ge APDs with p+n and p+nn- structures were developed for use in 1.0 ~ 1.55 um wavelength. The dark current of Ge APDs was reduced to improve detection sensitivity by newly developed processes. Heterojunction InGaAs APDs were developed, which are formed in a top window type planar structure with an InP cap. Avalanche gain of about 30 and low dark current density of about 2 x 10-5A/cm2 at 0.9VB were obtained. High bit-rate operation was achieved at 450Mb/s.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsuhiko Nishida, Hideo Iwasaki, Kenko Taguchi, "Ge And InGaAs Avalanche Photodiodes For Long Wavelength Optical Communication Use", Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); doi: 10.1117/12.935175; https://doi.org/10.1117/12.935175
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