30 November 1983 Photoconductivity Of The New Cd1-xMnxS Semimagnetic Compound.
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Proceedings Volume 0395, Advanced Infrared Sensor Technology; (1983) https://doi.org/10.1117/12.935212
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland
Abstract
Cd1-xMnxS is a new family of semiconducting compounds which show good photoresponse in the visible region. Observed photoresponse curves show that the maxima change between 625 nm to 650 nm as x varies from 0.1 to 0.4. This allows the selection of the spectral response according to technological requirements. Before further applications towards photodetection, the growth techniques for these crystals needs to be improved to guarantee the reproductivity and homogeneity of these materials.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Martin, N. V. Joshi, A. B. Vincent, "Photoconductivity Of The New Cd1-xMnxS Semimagnetic Compound.", Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); doi: 10.1117/12.935212; https://doi.org/10.1117/12.935212
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