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26 October 1983 Coupling Properties Of Semiconductor Lasers To Collimating Optics
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Proceedings Volume 0396, Advances in Laser Scanning and Recording; (1983) https://doi.org/10.1117/12.935269
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland
Abstract
Semiconductor lasers are used to an increasing extent in electro-optical systems. The highly divergent emission of the laser is usually collimated into a parallel beam. The properties of the collimated beam are directly related to the properties of emission. The physical origin of far-field distribution, wave aberration, astigmatism and polarization are discussed and related to the properties of the collimated beam. Refractive-index guided and gain-guided lasers are compared with regard to maximum output power, coupling efficiency, wave aberrations, and feedback-induced noise.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elmar E. Wagner, Jorg Angerstein, and Klaus Petermann "Coupling Properties Of Semiconductor Lasers To Collimating Optics", Proc. SPIE 0396, Advances in Laser Scanning and Recording, (26 October 1983); https://doi.org/10.1117/12.935269
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